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Integrated Passive Devices (IPD's) ''"or Integrated Passive Components (IPC's)"'' are attracting an increasing interest due to constant needs of handheld wireless devices to further decrease in size and cost and increase in functionality. Many functional blocks such as impedance matching circuits, harmonic filters, couplers and baluns and power combiner/divider can be realized by IPDs technology. IPDs are generally fabricated using standard wafer fab technologies such as thin film and photolithography processing. IPDs can be designed as flip chip mountable or wire bodable components and the substates for IPDs usually are thin film substrates like silicon, alumina or glass. IPD technology offers the ideal trade-off for system in package integration thanks to the capability to grind the wafers below 100µm thickness and the flavor of packaging options (micro-bumping, wirebonding, copper pads, ) and delivery mode options (wafers delivery, tape & reel...). In addition, some IPD suppliers offer full design kit support so that System in Package module makers are able to design their own IPD fulfilling their specific and custom requirements. 3D passive integration in silicon is one of the technologies used to manufacture Integrated Passive Devices (IPD), enabling High-density trench capacitors, MIM capacitors, resistors, high-Q inductors, PIN diodes or Zener diodes to be implemented in silicon. These passives combined with active devices in one package respond to very high reliability applications such as medical grade components. ==References== *Lianjun Liu et al., ''Compact Harmonic Filter Design and Fabrication Using IPD Technology'', IEEE Transactions on components and packaging technologies, Vol 30, No. 4, 2007 *YongTaek Lee, Kai Liu et al., (''High Rejection Low-Pass-Filter Design Using Integrated Passive Device Technology for Chip-Scale Module Package'' ), Electronic Components and Technology Conference (ECTC), 2010 *Kai Liu, YongTaek Lee et al., (''Die Thickness Effects in RF IPD Front-end Module Stack-Die Assemblies'' ), Electronic Components and Technology Conference (ECTC), 2010 * Integrated Passive Devices Technology Breakthrough, Electronics conderence, 2012, HITECH, https://commons.wikimedia.org/wiki/File:Integrated_Passive_Devices_Electronics_conference_051012.pdf * Foundry for RF IPD process, STMicroelectronics, TA0348, 2013, http://www.st.com/web/en/resource/technical/document/technical_article/DM00086348.pdf * Integrated Passive Devices for RF applications, http://www.st.com/st-web-ui/static/active/en/resource/sales_and_marketing/promotional_material/flyer/flipadrf1009.pdf 抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』 ■ウィキペディアで「Integrated passive devices」の詳細全文を読む スポンサード リンク
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